PBSS4032SPN,115 دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت PBSS4032SPN,115-Isee	دانلود دیتاشیت

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RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: Nexperia PBSS4032SPN,115
Transistor Type: 1PCSNPN&1PCSPNP
Operating Temperature: +150°C@(Tj)
Collector Current (Ic): 5.7A;4.8A
Power Dissipation (Pd): 2.3W
Transition Frequency (fT): 140MHz;115MHz
DC Current Gain (hFE@Ic,Vce): 250@2A,2V;150@2A,2V
Collector Cut-Off Current (Icbo): 100nA
Collector-Emitter Breakdown Voltage (Vceo): 30V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@6A,300mA;340mV@5A,250mA
Package: SOP-8
Manufacturer: Nexperia